284 lines
8.4 KiB
C++
284 lines
8.4 KiB
C++
#include "Flash.h"
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#include <stdlib.h>
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#define FLASH_DEBUG DEBUG
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//static const uint STM32_FLASH_KEY1 = 0x45670123;
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//static const uint STM32_FLASH_KEY2 = 0xcdef89ab;
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#if defined (STM32F10X_HD) || defined (STM32F10X_HD_VL) || defined (STM32F10X_CL) || defined (STM32F10X_XL)
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#define FLASH_PAGE_SIZE ((uint16_t)0x800)
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#else
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#define FLASH_PAGE_SIZE ((uint16_t)0x400)
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#endif
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Flash::Flash()
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{
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Size = *(__IO ushort *)(0x1FFFF7E0) << 10; // 里面的单位是k，要转为字节
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BytesPerBlock = FLASH_PAGE_SIZE;
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StartAddress = 0x8000000;
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}
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/* 读取段数据 （起始段，字节数量，目标缓冲区） */
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bool Flash::Read(uint address, byte* buf, uint numBytes)
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{
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if (buf == NULL) return false;
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if(address < StartAddress || address + numBytes > StartAddress + Size) return false;
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#if FLASH_DEBUG
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debug_printf( "Flash::Read( 0x%08x, %d, 0x%08x)\r\n", address, numBytes, buf );
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#endif
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// 按字读取
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ushort* ChipAddress = (ushort *)address;
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ushort* EndAddress = (ushort *)(address + numBytes);
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ushort* pBuf = (ushort *)buf;
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while(ChipAddress < EndAddress)
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{
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*pBuf++ = *ChipAddress++;
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}
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return true;
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}
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/* 写入段数据 （起始段，段数量，目标缓冲区，读改写） */
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bool Flash::WriteBlock(uint address, byte* buf, uint numBytes, bool fIncrementDataPtr)
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{
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if(address < StartAddress || address + numBytes > StartAddress + Size) return false;
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// 进行闪存编程操作时(写或擦除)，必须打开内部的RC振荡器(HSI)
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// 打开 HSI 时钟
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RCC->CR |= RCC_CR_HSION;
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while(!(RCC->CR & RCC_CR_HSIRDY));
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/*if (FLASH->CR & FLASH_CR_LOCK) { // unlock
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FLASH->KEYR = STM32_FLASH_KEY1;
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FLASH->KEYR = STM32_FLASH_KEY2;
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}*/
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FLASH_Unlock();
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ushort* ChipAddress = (ushort *)address;
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ushort* EndAddress = (ushort *)(address + numBytes);
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ushort* pBuf = (ushort *)buf;
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// 开始编程
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FLASH->CR = FLASH_CR_PG;
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//FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
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while(ChipAddress < EndAddress) {
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if (*ChipAddress != *pBuf) {
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// write data
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*ChipAddress = *pBuf;
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// wait for completion
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while (FLASH->SR & FLASH_SR_BSY);
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// check
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if (*ChipAddress != *pBuf) {
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debug_printf( " Flash_WriteToSector failure @ 0x%08x, write 0x%08x, read 0x%08x\r\n", (uint)ChipAddress, *pBuf, *ChipAddress );
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return false;
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}
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}
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ChipAddress++;
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if(fIncrementDataPtr) pBuf++;
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}
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// 重置并锁定控制器。直接赋值一了百了，后面两个都是位运算，更麻烦
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//FLASH->CR = FLASH_CR_LOCK;
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//FLASH->CR &= ~FLASH_CR_PG;
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FLASH_Lock();
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// 关闭 HSI 时钟
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RCC->CR &= ~RCC_CR_HSION;
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return true;
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}
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bool Flash::Write(uint address, byte* buf, uint numBytes, bool readModifyWrite)
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{
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if(address < StartAddress || address + numBytes > StartAddress + Size) return false;
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#if FLASH_DEBUG
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debug_printf( "Flash::Write( 0x%08x, %d, 0x%08x, %d )", address, numBytes, buf, readModifyWrite );
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int len = 0x10;
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if(numBytes < len) len = numBytes;
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//debug_printf(" Data: ");
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//!!! 必须另起一个指针，否则移动原来的指针可能造成重大失误
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byte* p = buf;
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for(int i=0; i<len; i++) debug_printf(" %02X", *p++);
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debug_printf("\r\n");
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#endif
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// 如果没有读改写，直接执行
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if(!readModifyWrite) return WriteBlock(address, buf, numBytes, true);
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// Flash操作一般需要先擦除然后再写入，由于擦除是按块进行，这就需要先读取出来，修改以后再写回去
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// 从地址找到所在扇区
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uint offset = (uint)address % BytesPerBlock;
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byte* pData = buf; // 指向要下一个写入的数据
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uint remainSize = numBytes; // 剩下数据数量
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uint addressNow = address; // 下一个要写入数据的位置
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// 分配一块内存，作为读取备份修改使用
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byte* pBuf = (byte*)malloc(BytesPerBlock);
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if(pBuf == NULL) return false;
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bool fRet = true;
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if(offset) // 写入第一个半块
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{
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memcpy(pBuf,(byte *)(addressNow-offset),offset);
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memcpy(pBuf+offset,pData,BytesPerBlock-offset);
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Erase(addressNow-offset, BytesPerBlock);
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fRet = WriteBlock(addressNow-offset,pBuf, BytesPerBlock,true);
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if(!fRet){ free(pBuf); return false;}
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remainSize -= (BytesPerBlock - offset);
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addressNow += (BytesPerBlock - offset);
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pData += (BytesPerBlock - offset);
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}
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for(int i = 0;remainSize > BytesPerBlock;i++) // 连续整块
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{
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Erase(addressNow, BytesPerBlock);
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fRet = WriteBlock(addressNow,pData, BytesPerBlock,true);
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if(!fRet){ free(pBuf); return false;}
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pData += BytesPerBlock;
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addressNow += BytesPerBlock;
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remainSize -= BytesPerBlock;
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}
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if(remainSize != 0) // 最后一个半块
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{
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memcpy(pBuf,pData,remainSize);
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memcpy(&pBuf[remainSize],(byte *)(addressNow+remainSize),BytesPerBlock-remainSize);
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Erase(addressNow, BytesPerBlock);
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fRet = WriteBlock(addressNow,pBuf, BytesPerBlock,true);
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}
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if(pBuf != NULL) free(pBuf);
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return fRet;
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}
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bool Flash::Memset(uint address, byte data, uint numBytes)
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{
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if(address < StartAddress || address + numBytes > StartAddress + Size) return false;
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#if FLASH_DEBUG
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debug_printf( "Flash::Memset( 0x%08x, %d, 0x%02x )\r\n", address, numBytes, data );
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#endif
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// 这里还没有考虑超过一块的情况，将来补上
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return WriteBlock( address, &data, numBytes, false);
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}
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/* 指定块是否被擦除 */
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bool Flash::IsBlockErased(uint address, uint numBytes)
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{
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if(address < StartAddress || address + numBytes > StartAddress + Size) return false;
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#if FLASH_DEBUG
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debug_printf( "Flash::IsBlockErased( 0x%08x, %d )\r\n", address, numBytes );
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#endif
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ushort* ChipAddress = (ushort *) address;
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ushort* EndAddress = (ushort *)(address + numBytes);
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while(ChipAddress < EndAddress)
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{
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if(*ChipAddress != 0xFFFF)
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{
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return false;
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}
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ChipAddress++;
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}
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return true;
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}
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/* 擦除块 （段地址） */
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bool Flash::EraseBlock(uint address)
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{
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if(address < StartAddress || address + BytesPerBlock > StartAddress + Size) return false;
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#if FLASH_DEBUG
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debug_printf( "Flash::EraseBlock( 0x%08x )", address );
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#endif
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// 进行闪存编程操作时(写或擦除)，必须打开内部的RC振荡器(HSI)
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// 打开 HSI 时钟
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RCC->CR |= RCC_CR_HSION;
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while(!(RCC->CR & RCC_CR_HSIRDY));
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/*if (FLASH->CR & FLASH_CR_LOCK) { // unlock
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FLASH->KEYR = STM32_FLASH_KEY1;
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FLASH->KEYR = STM32_FLASH_KEY2;
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}*/
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FLASH_Unlock();
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// 打开擦除
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/*FLASH->CR = FLASH_CR_PER;
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// 设置页地址
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FLASH->AR = (uint)address;
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// 开始擦除
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FLASH->CR = FLASH_CR_PER | FLASH_CR_STRT;
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// 确保繁忙标记位被设置 (参考 STM32 勘误表)
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FLASH->CR = FLASH_CR_PER | FLASH_CR_STRT;
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// 等待完成
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while (FLASH->SR & FLASH_SR_BSY);*/
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//FLASH_Status status = FLASH_COMPLETE;
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//boolret = true;
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#ifndef STM32F4
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FLASH_Status status = FLASH_ErasePage(address);
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#else
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FLASH_Status status = FLASH_EraseSector(address, VoltageRange_3);
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#endif
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bool ret = status == FLASH_COMPLETE;
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// 重置并锁定控制器。直接赋值一了百了，后面两个都是位运算，更麻烦
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//FLASH->CR = FLASH_CR_LOCK;
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//FLASH->CR &= ~FLASH_CR_PER;
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FLASH_Lock();
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// 关闭 HSI 时钟
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RCC->CR &= ~RCC_CR_HSION;
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#if FLASH_DEBUG
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byte* p = (byte*)address;
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for(int i=0; i<0x10; i++) debug_printf(" %02X", *p++);
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debug_printf("\r\n");
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#endif
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return ret;
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}
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// 擦除块。起始地址，字节数量默认0表示擦除全部
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bool Flash::Erase(uint address, uint numBytes)
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{
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if(address < StartAddress || address + numBytes > StartAddress + Size) return false;
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#if FLASH_DEBUG
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debug_printf( "Flash::Erase( 0x%08x, 0x%08x )", address, numBytes );
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#endif
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if(numBytes == 0) numBytes = StartAddress + Size - address;
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// 该地址所在的块
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uint addr = address - ((uint)address % BytesPerBlock);
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uint end = address + numBytes;
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while(addr < end)
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{
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EraseBlock(addr);
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addr += BytesPerBlock;
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}
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return true;
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}
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