206 lines
5.5 KiB
C++
206 lines
5.5 KiB
C++
#include "Flash.h"
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#include "Platform\stm32.h"
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#define FLASH_DEBUG DEBUG
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//static const uint STM32_FLASH_KEY1 = 0x45670123;
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//static const uint STM32_FLASH_KEY2 = 0xcdef89ab;
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#if defined (STM32F10X_HD) || defined (STM32F10X_HD_VL) || defined (STM32F10X_CL) || defined (STM32F10X_XL)
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#define FLASH_PAGE_SIZE ((uint16_t)0x800)
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#else
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#define FLASH_PAGE_SIZE ((uint16_t)0x400)
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#endif
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Flash::Flash()
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{
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//Size = *(__IO ushort *)(0x1FFFF7E0) << 10; // 里面的单位是k，要转为字节
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Size = Sys.FlashSize << 10;
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Block = FLASH_PAGE_SIZE;
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Start = 0x8000000;
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ReadModifyWrite = true;
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}
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/* 写入段数据 （起始段，段数量，目标缓冲区，读改写） */
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bool Flash::WriteBlock(uint address, const byte* buf, uint len, bool inc) const
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{
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if(address < Start || address + len > Start + Size) return false;
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// 进行闪存编程操作时(写或擦除)，必须打开内部的RC振荡器(HSI)
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// 打开 HSI 时钟
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RCC->CR |= RCC_CR_HSION;
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while(!(RCC->CR & RCC_CR_HSIRDY));
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/*if (FLASH->CR & FLASH_CR_LOCK) { // unlock
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FLASH->KEYR = STM32_FLASH_KEY1;
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FLASH->KEYR = STM32_FLASH_KEY2;
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}*/
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FLASH_Unlock();
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ushort* s = (ushort*)address;
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ushort* e = (ushort*)(address + len);
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const ushort* p = (const ushort*)buf;
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// 开始编程
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FLASH->CR = FLASH_CR_PG;
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//FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
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while(s < e) {
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if (*s != *p) {
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*s = *p;
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while (FLASH->SR & FLASH_SR_BSY);
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if (*s != *p) {
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debug_printf("Flash::WriteBlock 失败 0x%08x, 写 0x%04x, 读 0x%04x\r\n", s, *p, *s);
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return false;
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}
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}
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s++;
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if(inc) p++;
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}
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// 重置并锁定控制器。直接赋值一了百了，后面两个都是位运算，更麻烦
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//FLASH->CR = FLASH_CR_LOCK;
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//FLASH->CR &= ~FLASH_CR_PG;
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FLASH_Lock();
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// 关闭 HSI 时钟
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RCC->CR &= ~RCC_CR_HSION;
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return true;
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}
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/* 擦除块 （段地址） */
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bool Flash::EraseBlock(uint address) const
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{
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if(address < Start || address + Block > Start + Size) return false;
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#if FLASH_DEBUG
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debug_printf("\tFlash::EraseBlock(0x%08x)\r\n", address);
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#endif
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// 进行闪存编程操作时(写或擦除)，必须打开内部的RC振荡器(HSI)
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// 打开 HSI 时钟
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RCC->CR |= RCC_CR_HSION;
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while(!(RCC->CR & RCC_CR_HSIRDY));
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/*if (FLASH->CR & FLASH_CR_LOCK) { // unlock
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FLASH->KEYR = STM32_FLASH_KEY1;
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FLASH->KEYR = STM32_FLASH_KEY2;
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}*/
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FLASH_Unlock();
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// 打开擦除
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/*FLASH->CR = FLASH_CR_PER;
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// 设置页地址
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FLASH->AR = (uint)address;
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// 开始擦除
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FLASH->CR = FLASH_CR_PER | FLASH_CR_STRT;
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// 确保繁忙标记位被设置 (参考 STM32 勘误表)
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FLASH->CR = FLASH_CR_PER | FLASH_CR_STRT;
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// 等待完成
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while (FLASH->SR & FLASH_SR_BSY);*/
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//FLASH_Status status = FLASH_COMPLETE;
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//boolret = true;
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#ifndef STM32F4
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FLASH_Status status = FLASH_ErasePage(address);
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#else
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FLASH_Status status = FLASH_EraseSector(address, VoltageRange_3);
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#endif
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bool ret = status == FLASH_COMPLETE;
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// 重置并锁定控制器。直接赋值一了百了，后面两个都是位运算，更麻烦
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//FLASH->CR = FLASH_CR_LOCK;
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//FLASH->CR &= ~FLASH_CR_PER;
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FLASH_Lock();
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// 关闭 HSI 时钟
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RCC->CR &= ~RCC_CR_HSION;
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#if FLASH_DEBUG
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/*byte* p = (byte*)address;
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for(int i=0; i<0x10; i++) debug_printf(" %02X", *p++);
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debug_printf("\r\n");*/
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#endif
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return ret;
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}
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/*
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// 设置读保护
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if(FLASH_GetReadOutProtectionStatus() != SET)
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{
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FLASH_Unlock();
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FLASH_ReadOutProtection(ENABLE);
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}
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// 取消读保护 执行后Flash就清空了 注意：要上电复位才可以使用IC
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if(FLASH_GetReadOutProtectionStatus() != RESET)
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{
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FLASH_Unlock();
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FLASH_ReadOutProtection(DISABLE);
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* @arg OB_RDP_Level_0: No protection
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* @arg OB_RDP_Level_1: Read protection of the memory
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* @arg OB_RDP_Level_2: Chip protection
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* @retval FLASH Status: The returned value can be:
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* FLASH_ERROR_PROGRAM, FLASH_ERROR_WRP, FLASH_COMPLETE or FLASH_TIMEOUT.
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FLASH_Status FLASH_OB_RDPConfig(uint8_t OB_RDP)
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}*/
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bool Flash::ReadOutProtection(bool set)
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{
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#if defined(STM32F1)
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bool isProt = FLASH_GetReadOutProtectionStatus() == SET ? true : false;
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if (isProt == set)return isProt;
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if (set)
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{
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// FLASH_Unlock(); // 多处资料都写了这一行并注释了
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FLASH_ReadOutProtection(ENABLE);
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}
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else
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{
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// 取消读保护会清空 Flash 内容，注意：要上电复位才可以使用IC
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FLASH_Unlock();
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FLASH_ReadOutProtection(DISABLE);
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}return set;
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#endif
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#if defined(STM32F0)
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bool isProt = FLASH_OB_GetRDP() == SET ? true : false;
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if (isProt == set)return isProt;
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if (set)
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{
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FLASH_OB_Unlock();
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FLASH_OB_RDPConfig(OB_RDP_Level_1);
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// FLASH_OB_RDPConfig(OB_RDP_Level_2);
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/* Warning: When enabling read protection level 2
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it's no more possible to go back to level 1 or 0
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* OB_RDP_Level_0: No protection
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* OB_RDP_Level_1 : Read protection of the memory
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* OB_RDP_Level_2 : Chip protection */
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FLASH_OB_Lock();
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}else
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{
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// 取消读保护会清空 Flash 内容，注意：要上电复位才可以使用IC
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FLASH_Unlock();
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FLASH_OB_RDPConfig(OB_RDP_Level_0);
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FLASH_OB_Lock();
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}return set;
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#endif
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}
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