129 lines
3.6 KiB
C++
129 lines
3.6 KiB
C++
#include "Flash.h"
|
||
#include <stdlib.h>
|
||
|
||
#define FLASH_DEBUG DEBUG
|
||
|
||
//static const uint STM32_FLASH_KEY1 = 0x45670123;
|
||
//static const uint STM32_FLASH_KEY2 = 0xcdef89ab;
|
||
|
||
#if defined (STM32F10X_HD) || defined (STM32F10X_HD_VL) || defined (STM32F10X_CL) || defined (STM32F10X_XL)
|
||
#define FLASH_PAGE_SIZE ((uint16_t)0x800)
|
||
#else
|
||
#define FLASH_PAGE_SIZE ((uint16_t)0x400)
|
||
#endif
|
||
|
||
Flash::Flash()
|
||
{
|
||
//Size = *(__IO ushort *)(0x1FFFF7E0) << 10; // 里面的单位是k，要转为字节
|
||
Size = Sys.FlashSize << 10;
|
||
Block = FLASH_PAGE_SIZE;
|
||
Start = 0x8000000;
|
||
ReadModifyWrite = true;
|
||
}
|
||
|
||
/* 写入段数据 （起始段，段数量，目标缓冲区，读改写） */
|
||
bool Flash::WriteBlock(uint address, const byte* buf, uint len, bool inc)
|
||
{
|
||
if(address < Start || address + len > Start + Size) return false;
|
||
|
||
// 进行闪存编程操作时(写或擦除)，必须打开内部的RC振荡器(HSI)
|
||
// 打开 HSI 时钟
|
||
RCC->CR |= RCC_CR_HSION;
|
||
while(!(RCC->CR & RCC_CR_HSIRDY));
|
||
|
||
/*if (FLASH->CR & FLASH_CR_LOCK) { // unlock
|
||
FLASH->KEYR = STM32_FLASH_KEY1;
|
||
FLASH->KEYR = STM32_FLASH_KEY2;
|
||
}*/
|
||
FLASH_Unlock();
|
||
|
||
ushort* s = (ushort*)address;
|
||
ushort* e = (ushort*)(address + len);
|
||
const ushort* p = (const ushort*)buf;
|
||
|
||
// 开始编程
|
||
FLASH->CR = FLASH_CR_PG;
|
||
//FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
|
||
|
||
while(s < e) {
|
||
if (*s != *p) {
|
||
*s = *p;
|
||
while (FLASH->SR & FLASH_SR_BSY);
|
||
if (*s != *p) {
|
||
debug_printf("Flash::WriteBlock 失败 0x%08x, 写 0x%04x, 读 0x%04x\r\n", s, *p, *s);
|
||
return false;
|
||
}
|
||
}
|
||
s++;
|
||
if(inc) p++;
|
||
}
|
||
|
||
// 重置并锁定控制器。直接赋值一了百了，后面两个都是位运算，更麻烦
|
||
//FLASH->CR = FLASH_CR_LOCK;
|
||
//FLASH->CR &= ~FLASH_CR_PG;
|
||
FLASH_Lock();
|
||
|
||
// 关闭 HSI 时钟
|
||
RCC->CR &= ~RCC_CR_HSION;
|
||
|
||
return true;
|
||
}
|
||
|
||
/* 擦除块 （段地址） */
|
||
bool Flash::EraseBlock(uint address)
|
||
{
|
||
if(address < Start || address + Block > Start + Size) return false;
|
||
|
||
#if FLASH_DEBUG
|
||
debug_printf("\tFlash::EraseBlock(0x%08x)\r\n", address);
|
||
#endif
|
||
|
||
// 进行闪存编程操作时(写或擦除)，必须打开内部的RC振荡器(HSI)
|
||
// 打开 HSI 时钟
|
||
RCC->CR |= RCC_CR_HSION;
|
||
while(!(RCC->CR & RCC_CR_HSIRDY));
|
||
|
||
/*if (FLASH->CR & FLASH_CR_LOCK) { // unlock
|
||
FLASH->KEYR = STM32_FLASH_KEY1;
|
||
FLASH->KEYR = STM32_FLASH_KEY2;
|
||
}*/
|
||
FLASH_Unlock();
|
||
|
||
// 打开擦除
|
||
/*FLASH->CR = FLASH_CR_PER;
|
||
// 设置页地址
|
||
FLASH->AR = (uint)address;
|
||
// 开始擦除
|
||
FLASH->CR = FLASH_CR_PER | FLASH_CR_STRT;
|
||
// 确保繁忙标记位被设置 (参考 STM32 勘误表)
|
||
FLASH->CR = FLASH_CR_PER | FLASH_CR_STRT;
|
||
// 等待完成
|
||
while (FLASH->SR & FLASH_SR_BSY);*/
|
||
|
||
//FLASH_Status status = FLASH_COMPLETE;
|
||
//boolret = true;
|
||
|
||
#ifndef STM32F4
|
||
FLASH_Status status = FLASH_ErasePage(address);
|
||
#else
|
||
FLASH_Status status = FLASH_EraseSector(address, VoltageRange_3);
|
||
#endif
|
||
bool ret = status == FLASH_COMPLETE;
|
||
|
||
// 重置并锁定控制器。直接赋值一了百了，后面两个都是位运算，更麻烦
|
||
//FLASH->CR = FLASH_CR_LOCK;
|
||
//FLASH->CR &= ~FLASH_CR_PER;
|
||
FLASH_Lock();
|
||
|
||
// 关闭 HSI 时钟
|
||
RCC->CR &= ~RCC_CR_HSION;
|
||
|
||
#if FLASH_DEBUG
|
||
/*byte* p = (byte*)address;
|
||
for(int i=0; i<0x10; i++) debug_printf(" %02X", *p++);
|
||
debug_printf("\r\n");*/
|
||
#endif
|
||
|
||
return ret;
|
||
}
|