284 lines
8.1 KiB
C++
284 lines
8.1 KiB
C++
#include "Flash.h"
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#include <stdlib.h>
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#define FLASH_DEBUG DEBUG
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//static const uint STM32_FLASH_KEY1 = 0x45670123;
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//static const uint STM32_FLASH_KEY2 = 0xcdef89ab;
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#if defined (STM32F10X_HD) || defined (STM32F10X_HD_VL) || defined (STM32F10X_CL) || defined (STM32F10X_XL)
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#define FLASH_PAGE_SIZE ((uint16_t)0x800)
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#else
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#define FLASH_PAGE_SIZE ((uint16_t)0x400)
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#endif
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Flash::Flash()
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{
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//Size = *(__IO ushort *)(0x1FFFF7E0) << 10; // 里面的单位是k，要转为字节
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Size = Sys.FlashSize << 20;
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Block = FLASH_PAGE_SIZE;
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Start = 0x8000000;
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}
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/* 读取段数据 （起始段，字节数量，目标缓冲区） */
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bool Flash::Read(uint address, ByteArray& bs)
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{
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uint len = bs.Length();
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if (!len) return false;
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if(address < Start || address + len > Start + Size) return false;
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#if FLASH_DEBUG
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debug_printf("Flash::Read( 0x%08x, %d, 0x%08x)\r\n", address, len, bs.GetBuffer());
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#endif
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bs.Copy((byte*)address);
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return true;
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}
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/* 写入段数据 （起始段，段数量，目标缓冲区，读改写） */
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bool Flash::WriteBlock(uint address, const byte* buf, uint len, bool inc)
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{
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if(address < Start || address + len > Start + Size) return false;
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// 进行闪存编程操作时(写或擦除)，必须打开内部的RC振荡器(HSI)
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// 打开 HSI 时钟
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RCC->CR |= RCC_CR_HSION;
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while(!(RCC->CR & RCC_CR_HSIRDY));
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/*if (FLASH->CR & FLASH_CR_LOCK) { // unlock
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FLASH->KEYR = STM32_FLASH_KEY1;
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FLASH->KEYR = STM32_FLASH_KEY2;
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}*/
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FLASH_Unlock();
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ushort* s = (ushort*)address;
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ushort* e = (ushort*)(address + len);
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const ushort* p = (const ushort*)buf;
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// 开始编程
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FLASH->CR = FLASH_CR_PG;
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//FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
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while(s < e) {
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if (*s != *p) {
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*s = *p;
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while (FLASH->SR & FLASH_SR_BSY);
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if (*s != *p) {
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debug_printf("Flash::WriteBlock 失败 0x%08x, 写 0x%04x, 读 0x%04x\r\n", s, *p, *s);
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return false;
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}
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}
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s++;
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if(inc) p++;
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}
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// 重置并锁定控制器。直接赋值一了百了，后面两个都是位运算，更麻烦
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//FLASH->CR = FLASH_CR_LOCK;
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//FLASH->CR &= ~FLASH_CR_PG;
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FLASH_Lock();
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// 关闭 HSI 时钟
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RCC->CR &= ~RCC_CR_HSION;
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return true;
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}
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bool Flash::Write(uint address, const ByteArray& bs, bool readModifyWrite)
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{
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uint len = bs.Length();
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if (!len) return false;
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if(address < Start || address + len > Start + Size) return false;
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#if FLASH_DEBUG
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debug_printf("Flash::Write(0x%08x, %d, 0x%08x, %d)", address, len, bs.GetBuffer(), readModifyWrite);
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int len2 = 0x10;
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if(len < len2) len2 = len;
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//debug_printf(" Data: ");
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//!!! 必须另起一个指针，否则移动原来的指针可能造成重大失误
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byte* p = bs.GetBuffer();
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for(int i=0; i<len2; i++) debug_printf(" %02X", *p++);
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debug_printf("\r\n");
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#endif
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// 如果没有读改写，直接执行
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if(!readModifyWrite) return WriteBlock(address, bs.GetBuffer(), len, true);
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// Flash操作一般需要先擦除然后再写入，由于擦除是按块进行，这就需要先读取出来，修改以后再写回去
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// 从地址找到所在扇区
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uint offset = (uint)address % Block;
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byte* pData = bs.GetBuffer(); // 指向要下一个写入的数据
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uint remainSize = len; // 剩下数据数量
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uint addressNow = address; // 下一个要写入数据的位置
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// 分配一块内存，作为读取备份修改使用
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//byte* pBuf = (byte*)malloc(Block);
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//if(pBuf == NULL) return false;
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byte bb[FLASH_PAGE_SIZE];
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ByteArray bf;
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bf.Set(bb, FLASH_PAGE_SIZE);
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bf.SetLength(Block);
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// 写入第一个半块
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if(offset)
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{
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//memcpy(pBuf,(byte *)(addressNow-offset),offset);
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//memcpy(pBuf+offset,pData,Block-offset);
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// 计算块起始地址和剩余大小
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uint addr = addressNow - offset;
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uint size = Block - offset;
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// 先读取偏移之前的原始数据，再从来源数据拷贝半块数据，凑够一块
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bf.Copy((byte*)addr, offset);
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bf.Copy(pData, size, offset);
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// 整块擦除，然后整体写入
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Erase(addr, Block);
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if(!WriteBlock(addr, bf.GetBuffer(), Block, true)) return false;
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remainSize -= size;
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addressNow += size;
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pData += size;
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}
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// 连续整块
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for(int i = 0; remainSize > Block; i++)
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{
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Erase(addressNow, Block);
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if(!WriteBlock(addressNow, pData, Block, true)) return false;
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pData += Block;
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addressNow += Block;
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remainSize -= Block;
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}
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// 最后一个半块
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if(remainSize != 0)
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{
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//memcpy(pBuf, pData, remainSize);
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//memcpy(&pBuf[remainSize], (byte *)(addressNow+remainSize), Block-remainSize);
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// 从来源数据拷贝半块数据，再读取半块原始数据，凑够一块
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bf.Copy(pData, remainSize);
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bf.Copy((byte*)(addressNow + remainSize), Block - remainSize, remainSize);
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Erase(addressNow, Block);
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if(!WriteBlock(addressNow, bf.GetBuffer(), Block, true)) return false;
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}
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return true;
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}
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bool Flash::Memset(uint address, byte data, uint numBytes)
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{
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if(address < Start || address + numBytes > Start + Size) return false;
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#if FLASH_DEBUG
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debug_printf("Flash::Memset( 0x%08x, %d, 0x%02x )\r\n", address, numBytes, data);
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#endif
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// 这里还没有考虑超过一块的情况，将来补上
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return WriteBlock( address, &data, numBytes, false);
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}
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/* 指定块是否被擦除 */
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bool Flash::IsBlockErased(uint address, uint numBytes)
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{
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if(address < Start || address + numBytes > Start + Size) return false;
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#if FLASH_DEBUG
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debug_printf( "Flash::IsBlockErased( 0x%08x, %d )\r\n", address, numBytes );
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#endif
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ushort* p = (ushort*)address;
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ushort* e = (ushort*)(address + numBytes);
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while(p < e)
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{
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if(*p++ != 0xFFFF) return false;
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}
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return true;
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}
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/* 擦除块 （段地址） */
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bool Flash::EraseBlock(uint address)
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{
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if(address < Start || address + Block > Start + Size) return false;
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#if FLASH_DEBUG
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debug_printf("\tFlash::EraseBlock(0x%08x)\r\n", address);
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#endif
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// 进行闪存编程操作时(写或擦除)，必须打开内部的RC振荡器(HSI)
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// 打开 HSI 时钟
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RCC->CR |= RCC_CR_HSION;
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while(!(RCC->CR & RCC_CR_HSIRDY));
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/*if (FLASH->CR & FLASH_CR_LOCK) { // unlock
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FLASH->KEYR = STM32_FLASH_KEY1;
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FLASH->KEYR = STM32_FLASH_KEY2;
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}*/
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FLASH_Unlock();
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// 打开擦除
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/*FLASH->CR = FLASH_CR_PER;
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// 设置页地址
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FLASH->AR = (uint)address;
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// 开始擦除
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FLASH->CR = FLASH_CR_PER | FLASH_CR_STRT;
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// 确保繁忙标记位被设置 (参考 STM32 勘误表)
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FLASH->CR = FLASH_CR_PER | FLASH_CR_STRT;
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// 等待完成
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while (FLASH->SR & FLASH_SR_BSY);*/
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//FLASH_Status status = FLASH_COMPLETE;
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//boolret = true;
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#ifndef STM32F4
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FLASH_Status status = FLASH_ErasePage(address);
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#else
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FLASH_Status status = FLASH_EraseSector(address, VoltageRange_3);
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#endif
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bool ret = status == FLASH_COMPLETE;
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// 重置并锁定控制器。直接赋值一了百了，后面两个都是位运算，更麻烦
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//FLASH->CR = FLASH_CR_LOCK;
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//FLASH->CR &= ~FLASH_CR_PER;
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FLASH_Lock();
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// 关闭 HSI 时钟
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RCC->CR &= ~RCC_CR_HSION;
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#if FLASH_DEBUG
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/*byte* p = (byte*)address;
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for(int i=0; i<0x10; i++) debug_printf(" %02X", *p++);
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debug_printf("\r\n");*/
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#endif
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return ret;
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}
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// 擦除块。起始地址，字节数量默认0表示擦除全部
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bool Flash::Erase(uint address, uint numBytes)
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{
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if(address < Start || address + numBytes > Start + Size) return false;
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#if FLASH_DEBUG
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debug_printf("Flash::Erase(0x%08x, 0x%08x)\r\n", address, numBytes);
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#endif
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if(numBytes == 0) numBytes = Start + Size - address;
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// 该地址所在的块
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uint addr = address - ((uint)address % Block);
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uint end = address + numBytes;
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while(addr < end)
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{
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EraseBlock(addr);
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addr += Block;
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}
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return true;
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}
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